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1N5817, 1N5818, 1N5819
1N5817 and 1N5819 are Preferred Devices
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
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* Extremely Low VF * Low Stored Charge, Majority Carrier Conduction * Low Power Loss/High Efficiency
Mechanical Characteristics
* Case: Epoxy, Molded * Weight: 0.4 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * Lead and Mounting Surface Temperature for Soldering Purposes: * * * *
220C Max. for 10 Seconds, 1/16 from case Shipped in plastic bags, 1000 per bag. Available Tape and Reeled, 5000 per reel, by adding a "RL" suffix to the part number Polarity: Cathode Indicated by Polarity Band Marking: 1N5817, 1N5818, 1N5819 Leads are Readily Solderable
SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS
MAXIMUM RATINGS
Please See the Table on the Following Page
AXIAL LEAD CASE 59-10 DO-41 PLASTIC
MARKING DIAGRAM
1N 581x 1N581x = Device Code x = 7, 8 or 9
ORDERING INFORMATION
Device 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL Package Axial Lead Axial Lead Axial Lead Axial Lead Axial Lead Axial Lead Shipping 1000 Units/Bag 5000/Tape & Reel 1000 Units/Bag 5000/Tape & Reel 1000 Units/Bag 5000/Tape & Reel
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2003
1
April, 2003 - Rev. 6
Publication Order Number: 1N5817/D
1N5817, 1N5818, 1N5819
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Non-Repetitive Peak Reverse Voltage RMS Reverse Voltage Average Rectified Forward Current (Note 1) (VR(equiv) 0.2 VR(dc), TL = 90C, RJA = 80C/W, P.C. Board Mounting, see Note 2, TA = 55C) Ambient Temperature (Rated VR(dc), PF(AV) = 0, RJA = 80C/W) Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, half-wave, single phase 60 Hz, TL = 70C) Operating and Storage Junction Temperature Range (Reverse Voltage applied) Peak Operating Junction Temperature (Forward Current applied) Symbol VRRM VRWM VR VRSM VR(RMS) IO 1N5817 20 1N5818 30 1N5819 40 Unit V
24 14
36 21 1.0
48 28
V V A
TA IFSM
85
80 25 (for one cycle)
75
C A
TJ, Tstg TJ(pk)
-65 to +125 150
C C
THERMAL CHARACTERISTICS (Note 1)
Characteristic Thermal Resistance, Junction to Ambient Symbol RJA Max 80 Unit C/W
ELECTRICAL CHARACTERISTICS (TL = 25C unless otherwise noted) (Note 1)
Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 0.1 A) (iF = 1.0 A) (iF = 3.0 A) Symbol vF 1N5817 0.32 0.45 0.75 1.0 10 1N5818 0.33 0.55 0.875 1.0 10 1N5819 0.34 0.6 0.9 1.0 10 Unit V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2) (TL = 25C) (TL = 100C) 1. Lead Temperature reference is cathode lead 1/32 from case. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
IR
mA
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1N5817, 1N5818, 1N5819
NOTE 1. -- DETERMINING MAXIMUM RATINGS
125 TR, REFERENCE TEMPERATURE ( C)
40
30
23
Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.1 VRWM. Proper derating may be accomplished by use of equation (1).
(1) TA(max) = TJ(max) - RJAPF(AV) - RJAPR(AV) where TA(max) = Maximum allowable ambient temperature TJ(max) = Maximum allowable junction temperature (125C or the temperature at which thermal runaway occurs, whichever is lowest) PF(AV) = Average forward power dissipation PR(AV) = Average reverse power dissipation RJA = Junction-to-ambient thermal resistance
115 105 RJA (C/W) = 110 95 80 60
85 75
Figures 1, 2, and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures solve for a reference temperature as determined by equation (2).
TR = TJ(max) - RJAPR(AV) Substituting equation (2) into equation (1) yields:
TA(max) = TR - RqJAPF(AV)
2.0
3.0
4.0 5.0 7.0 10 VR, DC REVERSE VOLTAGE (VOLTS)
15
20
Figure 1. Maximum Reference Temperature 1N5817
125 TR, REFERENCE TEMPERATURE ( C)
40
(2)
(3)
115
30
23
Inspection of equations (2) and (3) reveals that TR is the ambient temperature at which thermal runaway occurs or where TJ = 125C, when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1, 2, and 3 as a difference in the rate of change of the slope in the vicinity of 115C. The data of Figures 1, 2, and 3 is based upon dc conditions. For use in common rectifier circuits, Table 1 indicates suggested factors for an equivalent dc voltage to use for conservative design, that is:
VR(equiv) = Vin(PK) x F (4)
105 95
RJA (C/W) = 110 80 60
85 75
3.0
4.0
5.0 7.0 10 15 20 VR, DC REVERSE VOLTAGE (VOLTS)
30
TR, REFERENCE TEMPERATURE ( C)
The factor F is derived by considering the properties of the various rectifier circuits and the reverse characteristics of Schottky diodes. EXAMPLE: Find TA(max) for 1N5818 operated in a 12-volt dc supply using a bridge circuit with capacitive filter such that IDC = 0.4 A (IF(AV) = 0.5 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), RJA = 80C/W.
Step 1. Find VR(equiv). Read F = 0.65 from Table 1, Step 1. Find VR(equiv) = (1.41)(10)(0.65) = 9.2 V. Step 2. Find TR from Figure 2. Read TR = 109C Step 1. Find @ VR = 9.2 V and RJA = 80C/W. Step 3. Find PF(AV) from Figure 4. **Read PF(AV) = 0.5 W I(FM) @ = 10 and IF(AV) = 0.5 A. I(AV) Step 4. Find TA(max) from equation (3). Step 4. Find TA(max) = 109 - (80) (0.5) = 69C. **Values given are for the 1N5818. Power is slightly lower for the 1N5817 because of its lower forward voltage, and higher for the 1N5819.
Figure 2. Maximum Reference Temperature 1N5818
125 115
40
30 23
105 95
RJA (C/W) = 110 80 60
85 75 4.0
5.0
7.0 10 15 20 VR, DC REVERSE VOLTAGE (VOLTS)
30
40
Table 1. Values for Factor F
Figure 3. Maximum Reference Temperature 1N5819
Full Wave, Center Tapped* Resistive 1.0 1.5 Capacitive 1.3 1.5
Circuit
Half Wave Resistive 0.5 0.75 Capacitive* 1.3 1.5 Use line to center tap voltage for Vin.
Full Wave, Bridge Resistive 0.5 0.75 Capacitive 0.65 0.75
Load
Sine Wave
Square Wave
*Note that VR(PK) 9 2.0 Vin(PK).
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1N5817, 1N5818, 1N5819
R JL THERMAL RESISTANCE, JUNCTION-TO-LEAD (C/W) , PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
90 80 70 60 MAXIMUM TYPICAL
BOTH LEADS TO HEATSINK, EQUAL LENGTH
5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05
Sine Wave I(FM) = (Resistive Load) I(AV)
Capacitive
Loads
{
5 10 20
dc
50 40 30
SQUARE WAVE TJ 125C
20 10 1 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1.0
0.2
L, LEAD LENGTH (INCHES)
0.4 0.6 0.8 1.0 2.0 IF(AV), AVERAGE FORWARD CURRENT (AMP)
4.0
Figure 4. Steady-State Thermal Resistance
Figure 5. Forward Power Dissipation 1N5817-19
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 t, TIME (ms) 50 ZJL(t) = ZJL * r(t) tp Ppk t1 Ppk TIME
DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse.
DTJL = Ppk w RqJL [D + (1 - D) w r(t1 + tp) + r(tp) - r(t1)] where DTJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t, from Figure 6, i.e.: r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp.
100
200
500
1.0k
2.0k
5.0k
10k
Figure 6. Thermal Response
NOTE 2. -- MOUNTING DATA
Mounting Method 1 P.C. Board with 1-1/2 x 1-1/2 copper surface.
Mounting Method 3 P.C. Board with 1-1/2 x 1-1/2 copper surface.
Data shown for thermal resistance junction-to-ambient (RJA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured.
TYPICAL VALUES FOR RJA IN STILL AIR
Mounting Method
L = 3/8 L L
Lead Length, L (in) 1/8 1/4 65 80 50 1/2 72 87 3/4 85 100 RJA C/W C/W C/W L L VECTOR PIN MOUNTING
Mounting Method 2 BOARD GROUND PLANE
1
52 67
2 3
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1N5817, 1N5818, 1N5819
NOTE 3. -- THERMAL CIRCUIT MODEL (For heat conduction through the leads)
RS(A)
TA(A)
RL(A)
RJ(A)
RJ(K) PD
RL(K)
RS(K)
TA(K)
TL(A)
TC(A)
TJ
TC(K)
TL(K)
Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heatsink. Terms in the model signify:
TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature RS = Thermal Resistance, Heatsink to Ambient RL = Thermal Resistance, Lead to Heatsink RJ = Thermal Resistance, Junction to Case PD = Power Dissipation IFSM, PEAK SURGE CURRENT (AMP)
(Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are:
RL = 100C/W/in typically and 120C/W/in maximum RJ = 36C/W typically and 46C/W maximum.
125 115
TL = 705C f = 60 Hz
20 10 7.0 i F, INSTANTANEOUS FORWARD CURRENT (AMP) 5.0 3.0 2.0 25C TC = 100C
1 Cycle
105 95 85
Surge Applied at Rated Load Conditions
75 1.0
2.0
3.0
1.0 0.7 0.5 0.3 0.2 30 20 I R, REVERSE CURRENT (mA) 15 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.05 0.03 100C TJ = 125C
5.0 7.0 10 20 NUMBER OF CYCLES
30
40
70 100
Figure 8. Maximum Non-Repetitive Surge Current
0.1 0.07 0.05 0.03 0.02 0.1
75C
25C
1N5817 1N5818 1N5819
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0
4.0
8.0
12
16
20
24
28
32
36
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Typical Forward Voltage
Figure 9. Typical Reverse Current
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1N5817, 1N5818, 1N5819
NOTE 4. -- HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 10.) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss: it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage.
200
C, CAPACITANCE (pF)
100 70 50 30 20
TJ = 255C f = 1.0 MHz 1N5817
1N5818 1N5819
10
0.4 0.6 0.8 1.0
2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS)
20
40
Figure 10. Typical Capacitance
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1N5817, 1N5818, 1N5819
PACKAGE DIMENSIONS
AXIAL LEAD, DO-41 CASE 59-10 ISSUE S
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 59-04 OBSOLETE, NEW STANDARD 59-09. 4. 59-03 OBSOLETE, NEW STANDARD 59-10. 5. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO-41 OUTLINE SHALL APPLY 6. POLARITY DENOTED BY CATHODE BAND. 7. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. DIM A B D F K INCHES MIN MAX 0.161 0.205 0.079 0.106 0.028 0.034 --- 0.050 1.000 --- MILLIMETERS MIN MAX 4.10 5.20 2.00 2.70 0.71 0.86 --- 1.27 25.40 ---
B
K F
D
A F K
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1N5817, 1N5818, 1N5819
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PUBLICATION ORDERING INFORMATION
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1N5817/D

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